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| ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOT RECOMMENDED FOR NEW DESIGN NE32684A FEATURES * VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz Noise Figure, NF (dB) 1.2 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 GA m, WG = 200 m * LG = 0.20 * LOW COST METAL CERAMIC PACKAGE * TAPE & REEL PACKAGING OPTION AVAILABLE 0.8 18 0.6 15 0.4 NF 0.2 12 DESCRIPTION The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 9 0 1 10 30 6 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF 1 NE32684A 84AS UNITS dB dB dBm dBm dB dB mA V mS A C/W C/W 15 -2.0 45 10.0 MIN TYP 0.5 11.5 8.5 10.75 11.0 11.5 40 -0.8 60 0.5 750 350 10.0 70 -0.2 MAX 0.6 PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current, VDS = 2 V,VGS = 0 V Pinch-off Voltage, VDS = 2 V, IDS = 100 A Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) GA1 P1dB G1dB IDSS VP gm IGSO RTH (CH-A) RTH (CH-C) Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. California Eastern Laboratories Associated Gain, GA (dB) * HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz 1 21 NE32684A ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGS IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 200 150 -65 to +150 165 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 201 NFOPT (dB) 0.28 0.30 0.33 0.37 0.40 0.45 0.50 0.62 0.75 0.91 1.10 GA (dB) 22.4 19.4 16.3 14.5 13.3 12.2 11.5 10.7 10.2 9.7 9.2 OPT MAG .90 .85 .72 .62 .54 .48 .42 .38 .34 .34 .38 ANG 17 32 64 91 116 138 164 -169 -139 -101 -77 Rn/50 0.45 0.37 0.27 0.21 0.15 0.10 0.07 0.07 0.08 0.09 0.10 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. Note: 1. Data at 20 GHz is extrapolated, not measured. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 1.8 1.6 14 12 Total Power Dissipation, PT (mW) 1.4 1.2 1.0 0.8 0.6 10 8 150 Infinite Heat sink TA = TLEAD 100 Free Air 50 6 4 2 NF 0 0 25 50 75 100 125 150 175 200 0.4 02 5 10 15 20 25 30 35 0 Ambient Temperature, TA (C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VGS 0.0 V 100 TRANSCONDUCTANCE vs. DRAIN CURRENT Transconductance, gm (mS) Drain Current, IDS (mA) 40 -0.1 80 30 -0.2 60 -0.3 20 -0.4 10 -0.5 -0.6 0 0 1.5 3.0 -0.7 40 20 0 0 10 20 30 40 50 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) 200 GA Noise Figure, NF (dB) NE32684A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) NE32684A VDS = 2 V, IDS = 10 mA FREQUENCY GHz 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG 0.999 0.999 0.999 0.991 0.960 0.922 0.873 0.816 0.758 0.712 0.667 0.629 0.592 0.549 0.513 0.487 0.464 0.443 0.423 0.415 0.414 0.413 0.432 S11 ANG -2.0 -3.6 -9.0 -17.6 -33.9 -49.4 -64.5 -79.0 -92.9 -106.0 -117.2 -128.8 -140.1 -152.4 -165.5 -179.2 168.1 154.0 139.4 123.9 107.4 89.2 74.1 MAG 4.879 4.872 4.859 4.796 4.750 4.618 4.370 4.179 3.962 3.720 3.527 3.348 3.218 3.104 2.994 2.901 2.825 2.763 2.707 2.638 2.614 2.581 2.528 S21 ANG 178.4 176.7 171.5 162.2 146.0 130.4 115.8 101.5 87.9 74.7 63.3 51.3 39.9 28.3 17.1 5.8 -4.5 -16.3 -27.6 -40.1 -52.5 -65.4 -78.0 MAG 0.002 0.003 0.008 0.015 0.029 0.042 0.054 0.062 0.070 0.077 0.084 0.090 0.095 0.103 0.110 0.115 0.121 0.130 0.138 0.144 0.152 0.161 0.167 S12 ANG 88.8 88.1 85.9 77.7 70.4 60.0 52.4 45.2 38.9 32.5 27.9 22.7 18.5 13.5 8.1 3.4 -1.2 -7.7 -13.9 -22.2 -30.1 -38.6 -49.2 MAG 0.555 0.554 0.556 0.552 0.541 0.520 0.505 0.478 0.454 0.437 0.425 0.421 0.418 0.410 0.396 0.382 0.368 0.369 0.373 0.374 0.371 0.360 0.341 S22 ANG -1.9 -2.8 -6.0 -12.0 -23.1 -33.0 -42.8 -52.5 -62.2 -71.8 -79.7 -88.7 -96.8 -105.2 -114.2 -123.2 -132.4 -143.0 -154.5 -166.2 -176.5 171.9 158.7 0.06 0.04 0.01 0.13 0.24 0.36 0.45 0.57 0.68 0.76 0.83 0.88 0.92 0.96 0.99 1.02 1.03 1.01 0.99 0.98 0.95 0.93 0.91 K S21 (dB) 13.8 13.7 13.7 13.6 13.5 13.3 12.8 12.4 12.0 11.4 10.9 10.5 10.1 9.8 9.5 9.2 9.0 8.8 8.6 8.4 8.3 8.2 8.1 MAG1 (dB) 33.9 32.1 27.8 25.0 22.1 20.4 19.1 18.3 17.5 16.8 16.2 15.7 15.3 14.8 14.3 13.1 12.5 12.6 12.9 12.6 12.3 12.0 11.8 Note: 1. Gain Calculations: 2 2 2 |S21| |S21| (K K 2 - 1 ). When K 1, MAG is undefined and MSG values are used. , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 MSG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG = NE32684A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) Coordinates in Ohms Frequency in GHz (VDS = 2 V, ID = 20 mA) NE32684A VDS = 2 V, ID = 20 mA FREQUENCY GHz 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG 0.999 0.999 0.998 0.986 0.948 0.894 0.833 0.766 0.703 0.653 0.607 0.569 0.529 0.487 0.554 0.428 0.407 0.387 0.368 0.359 0.358 0.361 0.379 S11 ANG -2.3 -4.0 -9.6 -18.9 -36.2 -52.3 -67.8 -82.1 -95.8 -108.6 -119.6 -130.6 -141.4 -153.2 -166.0 -179.3 167.8 154.5 139.9 124.4 107.6 89.4 73.7 MAG 6.403 6.366 6.384 6.298 6.108 5.792 5.404 5.063 4.713 4.385 4.112 3.861 3.686 3.517 3.376 3.262 3.165 3.081 3.007 2.934 2.910 2.865 2.812 S21 ANG 178.0 176.1 170.6 161.0 143.6 127.1 112.1 97.6 84.3 71.3 59.8 48.6 37.5 26.0 14.8 4.1 -5.9 -17.3 -27.9 -40.2 -52.3 -65.4 -77.8 MAG 0.002 0.003 0.007 0.014 0.026 0.038 0.049 0.058 0.067 0.074 0.082 0.090 0.097 0.107 0.114 0.121 0.130 0.138 0.146 0.154 0.160 0.169 0.174 S12 ANG 88.9 88.6 87.6 77.6 72.2 62.0 55.8 49.4 44.1 38.3 33.8 28.3 23.4 18.4 11.8 6.3 0.6 -5.4 -13.5 -21.6 -30.1 -39.1 -49.0 MAG 0.480 0.480 0.480 0.476 0.467 0.449 0.436 0.413 0.394 0.382 0.374 0.375 0.378 0.374 0.365 0.354 0.341 0.345 0.352 0.353 0.349 0.337 0.319 S22 ANG -2.0 -2.9 -5.9 -11.5 -22.0 -31.2 -40.4 -49.2 -58.3 -67.4 -74.9 -83.3 -90.8 -99.4 -108.0 -116.8 -125.5 -136.6 -148.4 -160.0 -170.6 177.9 165.2 0.06 0.04 0.03 0.17 0.30 0.46 0.56 0.68 0.77 0.85 0.90 0.93 0.96 0.98 1.00 1.01 1.01 0.99 0.97 0.96 0.94 0.92 0.91 K S21 (dB) 16.1 16.1 16.1 16.0 15.7 15.3 14.6 14.1 13.5 12.8 12.3 11.7 11.3 10.9 10.7 10.3 10.0 9.8 9.6 9.3 9.3 9.1 9.0 MAG1 (dB) 35.0 33.3 29.6 26.5 23.7 21.8 20.4 19.4 18.5 17.7 17.0 16.3 15.8 15.2 14.4 13.6 13.3 13.5 13.1 12.8 12.6 12.3 12.1 Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K K 2 - 1 ). When K 1, MAG is undefined and MSG values are used. , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 MSG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG = NE32684A OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84AS 1.78 0.2 ORDERING INFORMATION PART NUMBER NE32684AS NE32684A-T1 AVAILABILITY Bulk up to 1K 1K/Reel PACKAGE OUTLINE 84AS 84AS S Note: Long leaded (1.7 mm min.) 84A package available upon request in bulk quantitites up to 1000 pcs. To order specify NE32684A-SL. 1.78 0.2 D V S G 0.5 0.1 (ALL LEADS) 1.0 0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393/FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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